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High Voltage
Power MOSFETs
IXTT6N150
IXTH6N150
V DSS =
I D25 =
R DS(on) ≤
1500V
6A
3.5 Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-268 (IXTT)
Symbol
V DSS
V DGR
V GSS
V GSM
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
Maximum Ratings
1500
1500
± 20
± 30
V
V
V
V
G
TO-247 (IXTH)
S
D (Tab)
I D25
I DM
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
6
24
A
A
I A
E AS
T C = 25 ° C
T C = 25 ° C
3
500
A
mJ
G
D
S
D (Tab)
dv/dt
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
5
V/ns
P D
T J
T JM
T stg
T C = 25 ° C
540
- 55 ... +150
150
- 55 ... +150
W
° C
° C
° C
G = Gate
S = Source
D = Drain
Tab = Drain
T L
T SOLD
M d
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO247)
TO-268
TO-247
300
260
1.13 / 10
4
6
° C
° C
Nm/lb.in.
g
g
Features
International Standard Packages
Molding Epoxies Weet UL 94 V-0
Flammability Classification
Fast Intrinsic Diode
Low Package Inductance
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
1500
V
Advantages
Easy to Mount
Space Savings
V GS(th)
V DS = V GS , I D = 250 μ A
3.0
5.0
V
High Power Density
I GSS
I DSS
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
± 100 nA
25 μ A
250 μ A
Applications
High Voltage Power Supplies
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
3.5
Ω
Capacitor Discharge
Pulse Circuits
? 2012 IXYS CORPORATION, All Rights Reserved
DS100233B(05/12)
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